| PART |
Description |
Maker |
| MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
|
| MA4E2501L-1290W MA4E2501-1290 MA4E2501L-1290 MA4E2 |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
|
MACOM[Tyco Electronics]
|
| 5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI5082-2794 5082-2794 |
SCHOTTKY LOW BARRIER DIODE SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| BAT15-03W Q62702-A1104 |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HSB88WA |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| HSB88WK |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| PMEG2010EA |
Low VF (MEGA) Schottky barrier diode
20 V 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package
|
PHILIPS[Philips Semiconductors]
|
| BAT15V-02V-GS18 |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
|
VISHAY SEMICONDUCTORS
|
| BAT15-025R |
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SIEMENS A G
|
